Title :
Growth kinetics of solution grown Zn0.2Cd0.8S thin films
Author :
Padam, G.K. ; Rao, S.U.M. ; Malhotra, G.L.
Author_Institution :
Nat. Phys. Lab., New Delhi, India
Abstract :
A study of the nucleation and growth kinetics of Zn0.2Cd0.8S thin films grown at about 90 degrees C by the solution growth method on various substrates, e.g. glass, tin-oxide coated glass, quartz, and p-Si, using scanning electron microscopy, transmission electron microscopy, and electron diffraction techniques is presented. The appearance of the fiberous structure of Zn0.2Cd0.8S films grown on glass and tin-oxide coated glass in contrast with the appearance of spherical grains of Zn0.2Cd0.8S films grown on quartz and p-Si at smaller thicknesses clearly shows the role of the substrates in the growth of the films. It is also shown that with increasing thickness, the influence of the substrate surface decreases and the more stable crystalline phase appears.
Keywords :
II-VI semiconductors; cadmium compounds; nucleation; semiconductor growth; semiconductor thin films; zinc compounds; 90 degC; Si; SiO2; Sn oxide coated glass; Zn0.2Cd0.8S; electron diffraction; fiberous structure; glass substrate; growth kinetics; nucleation; p-Si substrate; quartz substrate; scanning electron microscopy; semiconductor; solution grown; spherical grains; stable crystalline phase; thickness; thin films; transmission electron microscopy; Crystallization; Diffraction; Electrons; Glass; Kinetic theory; Scanning electron microscopy; Semiconductor films; Sputtering; Substrates; Thick films; Transistors; Transmission electron microscopy; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105978
