Title :
Efficiency improvement in screen printed large area polycrystalline silicon solar cell with surface oxide passivation
Author :
Okamoto, K. ; Nakajima, K. ; Tanaka, S. ; Buya, N. Shi ; Nammori, T. ; Nunoi, T. ; Inoguchi, T.
Author_Institution :
Sharp Corp., Nara, Japan
Abstract :
The effectiveness of the surface-oxide passivation method for improving the performance of lower quality cast polycrystalline silicon substrates is evaluated. The relation between the quality of surface oxide films and solar cell performance is studied and indicates that the surface oxide passivation is effective for increasing the conversion efficiency even in low-quality polycrystalline silicon. A conversion efficiency of 15.3% was obtained in 10-cm*10-cm polycrystalline substrate after refinements in cell processing based on an investigation of the characteristics of the silicon-silicon-oxide interface.
Keywords :
elemental semiconductors; passivation; silicon; solar cells; thick films; 10 cm; 15.3 percent; Si-SixOx; cell processing; conversion efficiency; efficiency improvement; films; large area polycrystalline Si solar cells; performance; screen printed; surface oxide passivation; Crystallization; Oxidation; Passivation; Photoconductivity; Photovoltaic cells; Semiconductor films; Shape; Short circuit currents; Silicon; Substrates; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105980
