Title :
An electrical method for measuring bandgap grading in SiGe HBT´s
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ.
Abstract :
This paper describes an electrical method for measuring the bandgap difference across the neutral base of a SiGe Heterojunction Bipolar Transistor (HBT). It measures the effective bandgap grading due to germanium and including the effects of heavy doping. The device simulator, MEDICI, was used to verify this method and also to investigate the impact of effective bandgap narrowing on bandgap grading of high performance transistors with graded and uniform germanium profiles
Keywords :
Ge-Si alloys; doping profiles; energy gap; heavily doped semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor device testing; semiconductor materials; MEDICI; SiGe; SiGe HBT; bandgap grading measurement; device simulator; effective bandgap narrowing; electrical method; graded germanium profiles; heavy doping; heterojunction bipolar transistor; high performance transistors; uniform Ge profiles; Bipolar transistors; Doping; Electric variables measurement; Electron emission; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium; Voltage;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668615
