Influence of band parameter of gate dielectrics on the ballistic performance at same EOT

Author

Alam, Md Nur Kutubul ; Islam, Md Shariful ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2014

fDate

20-22 Dec. 2014

Firstpage

663

Lastpage

666

Abstract

Different high-k dielectrics have been supposed to provide same device performance if their physical thickness are not equal but equivalent, called “Equivalent oxide thickness” (EOT). For ultra thin body (UTB) devices like XOI, despite of EOT, conduction band offset (ΔE_C) at gate oxide-channel interface dominates the ballistic performance. In case of In_0.3Ga_0.7Sb XOI nFET using Al₂O₃ and HfO₂ with 0.5 nm EOT, we show the threshold voltage decreases and the subthreshold slope (SS) increases with increase in ΔE_C.

Keywords

high-k dielectric thin films; transistors; Al₂O₃; EOT; HfO₂; In_0.3Ga_0.7Sb; UTB devices; XOI nFET; band parameter; conduction band offset; equivalent oxide thickness; gate dielectrics; gate oxide-channel interface; high-k dielectrics; size 0.5 nm; ultrathin body devices; Dielectrics; Hafnium compounds; Logic gates; Performance evaluation; Threshold voltage; Transistors; Ballistic transport; High K; InGaSb; NEGF; XOI; gate dielectric;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-4167-4

Type

conf

DOI

10.1109/ICECE.2014.7026887

Filename

7026887