Title :
Pulsed THz emission from low temperature grown Be-doped InGaAs/InAlAs photoconductive switches at 1030 nm excitation
Author :
Dietz, R.J.B. ; Wilk, R. ; Globisch, B. ; Roehle, H. ; Stanze, D. ; Ullrich, S. ; Schumann, S. ; Born, N. ; Voss, N. ; Stecher, M. ; Koch, M. ; Sartorius, B. ; Schell, M.
Author_Institution :
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
We present first results of pulsed THz emission from low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures at an excitation wavelength of 1030 nm. The spectra obtained reach 3 THz. We further investigate the material´s relaxation time constants by differential transmission experiments.
Keywords :
III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; indium compounds; microwave photonics; molecular beam epitaxial growth; nanophotonics; nanostructured materials; optical multilayers; optical switches; photoconducting switches; terahertz wave generation; terahertz wave spectra; InGaAs-InAlAs:Be; differential transmission experiments; low temperature MBE grown multinanolayer structures; low temperature grown photoconductive switches; material relaxation time constants; pulsed THz emission; wavelength 1030 nm; Electron traps; Indium gallium arsenide; Laser excitation; Optical fiber dispersion; Ultrafast optics;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380349
