EMI emission from gate drive circuit of Boost converter

The voltage between drain and source of MOSFET during switching actions in Boost converter, in most cases, is considered as the major source of electromagnetic interference (EMI). However, the drive circuit of MOSFET, when along with an overshoot, which commonly exists, can also be another important EMI source. This paper analyzes the principle of the overshoot of drive voltage, and then proposes a method to suppress excess EMI emission by eliminating the drive overshoot for Boost converter. The effectiveness of the EMI suppression method is testified by experiments.