Title :
Electro-optical properties of Cd1-xZnxS films and fabrication of Cd1-xZnxS/InP heterojunctions
Author :
Pal, A.K. ; Dhar, A. ; Mondal, A. ; Basak, R.L. ; Chaudhuri, S.
Author_Institution :
Indian Assoc. for Cultivation of Sci., Calcutta, India
Abstract :
Cd1-xZnxS films (0\n\n\t\t
Keywords :
II-VI semiconductors; III-V semiconductors; cadmium compounds; carrier density; electronic conduction in crystalline semiconductor thin films; indium compounds; photoconductivity; semiconductor junctions; semiconductor thin films; solar cells; zinc compounds; 10 to 14 percent; C-V measurements; Cd1-xZnxS films; Cd1-xZnxS-InP heterojunctions; I-V measurements; carrier concentration; cells; deposition; device fabrication; efficiencies; electrical measurements; fill factor; four-probe technique; open-circuit voltage; optical measurements; resistivity; semiconductor; series resistance; short-circuit current; shunt resistance; spectral response; Annealing; Argon; Atmosphere; Conductivity; Electric variables measurement; Fabrication; Indium phosphide; Optical device fabrication; Optical devices; Optical films; Scanning electron microscopy; Temperature; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105991
