CuInSe2 films prepared by screen-printing and sintering method

The production of polycrystalline CuInSe₂ films by the screen-printing and sintering method is presented. To prepare fine powder for the screen-printing CuInSe₂ paste, pure Cu, In, and Se powders were mixed and ground in an agate ball mill with distilled water or ethylene glycol monophenyl ether to a grain size of around 1.5 mu m. It was found that CuInSe₂ is formed during the grinding process at room temperature, and its quantity increases proportionally to grinding time. The CuInSe₂ film is p-type with a resistivity of 1.1 Omega cm, Hall mobility of 1.0 cm²/Vs, and carrier concentration of 6.4*10¹⁸ cm^-3, and the optical bandgap is 1.0 eV. Photovoltaic effect was observed in a CdS/CuInSe₂ heterojunction fabricated by depositing CdS film on the sintered CuInSe₂ by RF sputtering.