Title :
Development of D-band Gunn oscillator
Author :
Kumar, Meena R. ; Kumar, Dilip ; Shukla, AK
Author_Institution :
Defence Electron. Applic. Lab., Dehradun
Abstract :
Gunn oscillator has been developed at center frequency of 140 GHz with the output power of 7 dBm using InP Gunn device. Resonant cap design approach was chosen due to its superiority in tunability and low FM noise. The Gunn Oscillator has been temperature cycled form 0degC to +50degC and a frequency stability of 200 KHz/degC was observed. The main use of this oscillator is as local oscillator especially in development of Radiometer for Imaging application.
Keywords :
Gunn oscillators; III-V semiconductors; frequency stability; indium compounds; millimetre wave oscillators; radiometry; D-band Gunn oscillator; FM noise; Gunn device; InP; frequency 140 GHz; frequency stability; imaging application; radiometer; resonant cap design approach; temperature 0 C to 50 C; Circuits; Diodes; Frequency; Gunn devices; Impedance; Indium phosphide; Low pass filters; Oscillators; Power generation; Resonance;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4763130
