Title :
The production of low resistivity p-type CdTe thin films using the coevaporation of CdTe with Te
Author :
Hill, R. ; Owens, T. ; Arshed, S. ; Miles, R.W.
Author_Institution :
Dept. of Phys., Newcastle upon Tyne Polytech., UK
Abstract :
The production of low-resistivity, p-type CdTe thin films using the coevaporation of CdTe with Te is presented. Thin films of CdTe were deposited onto glass slides using the coevaporation of CdTe with Te with control of the source temperature. p-type thin films were produced, and the influence of the Te source temperature on the electrical and optical properties of these films was investigated. The resistivity could be reduced from 106 Omega cm for TTe=20 degrees C to <0.1 Omega cm for TTe>400 degrees C. The mobility of the films is shown to increase with an increase in TTe to values >100 cm2 V-1 s-1 for CdTe resistivities <50 Omega cm. Arrhenius plots of rho and mu are also reported, and the results are consistent with a decrease in the intergrain potential barrier height as the CdTe resistivity is reduced.
Keywords :
II-VI semiconductors; cadmium compounds; carrier mobility; electronic conduction in crystalline semiconductor thin films; semiconductor growth; semiconductor thin films; vacuum deposition; Arrhenius plots; CdTe; coevaporation; electrical properties; intergrain potential barrier height; mobility; optical properties; p-type CdTe thin films; resistivity; semiconductor; Conductivity; Contact resistance; Glass; Optical control; Optical films; Photonic band gap; Photovoltaic cells; Production; Sputtering; Substrates; Tellurium; Temperature; Temperature control; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105994
