A fully integrated low power UWB LNA using self-body-bias technique for 6.2–10.6 GHz applications

Author

Karim, Mohammad Nahidul ; Hossain, Shahadat ; Barua, Simul ; Barua, Koushik ; Islam, Kazi Raisul

Author_Institution

Dept. of Electr. & Electron. Eng., American Int. Univ.-Bangladesh, Dhaka, Bangladesh

fYear

2014

fDate

20-22 Dec. 2014

Firstpage

556

Lastpage

559

Abstract

In this paper, a low power CMOS UWB low noise amplifier (LNA) suitable for 6.2-10.6 GHz application is presented. Using simultaneous noise matching (SNIM) and self-body-bias technique, the proposed LNA is designed to operate with low supply voltage in order to reduce power consumption. The simulated results showed that at 0.62V supply voltage, the LNA consumed 3.84mW with a maximum gain of 10 dB and average noise figure of 4.55 dB over the band of interest. Minimum port reflection parameters, S₁₁ and S₂₂ for the proposed amplifier were found <;-10 dB whereas 1-dB compression point was found at -16.2 dBm.

Keywords

CMOS integrated circuits; low noise amplifiers; low-power electronics; power consumption; ultra wideband technology; SNIM; UWB low noise amplifier; frequency 6.2 GHz to 10.6 GHz; gain 10 dB; low power CMOS UWB LNA; noise figure 4.55 dB; power 3.84 mW; power consumption; self-body-bias technique; simultaneous noise matching; ultra wideband LNA; voltage 0.62 V; CMOS integrated circuits; CMOS technology; Impedance matching; Logic gates; MOSFET; Noise; Noise figure; CMOS; FCC; LNA; RF; Ultra Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-4167-4

Type

conf

DOI

10.1109/ICECE.2014.7026898

Filename

7026898