Title :
Photoelectrochemical characterization of CuGaSe2 and Cu(Ga,In)Se2 films and defect chemical implications for solar cell performance
Author :
Cahen, David ; Kisilev, Anna ; Marcu, Victor ; Schock, Hans W. ; Noufi, Rommel
Author_Institution :
Dept. of Struct. Chem., Weizmann Inst. of Sci., Rehovot, Israel
Abstract :
The effective electronic parameters and the optical bandgap of CuGaSe2 and Cu(Ga,In)Se2 films were determined by using an organic liquid electrolyte to form a Schottky barrier to the films. Trends in the electronic parameters, composition, and additional information were used in a defect chemical framework to explore the effects of Ga substitution/doping on CuInSe2. Values for optical and (effective) electronic parameters for several CuGaSe2 films are reported. Photocurrent-wavelength data are also shown. In CuGaSe2 (as in CuInSe2), film stoichiometry needs to be reasonably well controlled, close to Cu/Ga=1, according to the results.
Keywords :
Schottky effect; copper compounds; crystal defects; electrochemistry; energy gap; gallium compounds; indium compounds; optical constants; photochemistry; photoconductivity; semiconductor thin films; semiconductor-electrolyte boundaries; solar cells; ternary semiconductors; CuGa1-xInxSe2; CuGaSe2; Ga substitution; Schottky barrier; defect; doping; electronic parameters; film stoichiometry; optical bandgap; organic liquid electrolyte; photocurrent-wavelength data; photoelectrochemical characterisation; semiconductor thin films; solar cell performance; Chemicals; Degradation; Doping; Electrodes; Guidelines; Optical films; Photonic band gap; Photovoltaic cells; Schottky barriers; Transistors; Voltage; Wire;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105996
