Title :
In-situ measurement and control of growth parameters in molecular beam epitaxy
Author :
Sohie, Guy R L ; Maracas, George N.
Author_Institution :
GE Corp. Res. & Dev. Center, Schenectady, NY, USA
Abstract :
Spectroscopic Ellipsometry (SE) has been adapted to a commercial III-V semiconductor Molecular Beam Epitaxy (MBE) system to monitor and control layer thickness and growth rate, substrate temperature, and ternary alloy composition. Results from a real-time experiment using feedback control based on SE measurements are presented. Algorithms are discussed for tracking of growth rate and temperature, and performance results are shown wing MBE ellipsometry data
Keywords :
III-V semiconductors; ellipsometry; feedback; molecular beam epitaxial growth; process control; semiconductor epitaxial layers; semiconductor growth; III-V semiconductor; ellipsometry data; feedback control; growth parameter control; growth rate; layer thickness; molecular beam epitaxy; spectroscopic ellipsometry; substrate temperature; ternary alloy composition; Epitaxial growth; Output feedback; Process control; Semiconductor films; Semiconductor growth;
Conference_Titel :
Control Applications, 1994., Proceedings of the Third IEEE Conference on
Conference_Location :
Glasgow
Print_ISBN :
0-7803-1872-2
DOI :
10.1109/CCA.1994.381424
