Investigation of temperature dependent microwave performance of AlGaN/GaN MISHFETs for high power wireless applications

Author

Aggarwal, Richie ; Agrawal, Ankit ; Gupta, Madhu ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi

fYear

2008

fDate

21-24 Nov. 2008

Firstpage

66

Lastpage

68

Abstract

The objective of this paper is to investigate and explore the potential of AlGaN/GaN based metal insulator semiconductor heterostructure field effect transistor (MISHFET) device for high temperature applications. A temperature dependent analytical model is proposed taking into account the effect of various temperature dependent material properties. The electrical characteristics like drain current, transconductance, cut-off frequency and saturation output power are evaluated for temperature range up to 573 K and a relative comparison is done with conventional HFET structures.

Keywords

III-V semiconductors; MISFET; aluminium compounds; gallium compounds; high-temperature electronics; microwave field effect transistors; power HEMT; thermal analysis; wide band gap semiconductors; AlGaN-GaN; MISHFET; high power wireless applications; high temperature applications; metal insulator semiconductor heterostructure field effect transistor; temperature dependent microwave performance; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; Insulation; MODFETs; Material properties; Metal-insulator structures; Microwave devices; Temperature dependence; AlGaN/GaN MISHFET; cut-off frequency; saturation drain current; saturation output power; threshold voltage; wide band gap semiconductor;

fLanguage

English

Publisher

ieee

Conference_Titel

Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on

Conference_Location

Jaipur

Print_ISBN

978-1-4244-2690-4

Electronic_ISBN

978-1-4244-2691-1

Type

conf

DOI

10.1109/AMTA.2008.4763139

Filename

4763139