DocumentCode :
2512626
Title :
Modeling and visualization of conductive temperature fields inside electronic component structures
Author :
Angot, Philippe ; Caltagirone, Jean-Paul
Author_Institution :
LEPT/ENSAM, Talence, France
fYear :
1988
fDate :
10-12 Feb. 1988
Firstpage :
112
Abstract :
Summary form only given, as follows. A general numerical code is reported which simulates the heat transfer inside microelectronic components for different environmental conditions. A two-dimensional scheme was implemented with control-volume techniques to solve the transient heat conduction equation in a heterogeneous and orthotropic rectangular domain. Inside this domain, the geometry of a given component section can be taken into account through a discretized rectangular grid. All parameters such as the heat capacity, thermal conductivity, and heat sources can be nodal-point-dependent and possibly varying with temperature or time. The method has been used to model cases for which great variations of thermal characteristics exist. Two types of boundary conditions can be introduced. The traditional external conditions can be expressed in terms of heat transfer coefficients and temperatures, while various internal heat transfer coefficients are used to simulate contact thermal resistances at the interfaces of different materials such as soldered joints or die-attaches.<>
Keywords :
digital simulation; electronic engineering computing; heat transfer; packaging; specific heat; temperature distribution; thermal conductivity; boundary conditions; conductive temperature fields; contact thermal resistances; die-attaches; discretized rectangular grid; electronic component structures; heat capacity; heat sources; heat transfer; heterogeneous orthotropic rectangular domain; microelectronic components; numerical code; soldered joints; thermal conductivity; transient heat conduction equation; two-dimensional model; visualization; Boundary conditions; Heat transfer; Microelectronics; Resistance heating; Temperature control; Thermal conductivity; Thermal resistance; Visualization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal and Temperature Measurement Symposium, 1988. SEMI-THERM IV., Fourth Annual IEEE
Conference_Location :
San Diego, CA, USA
Type :
conf
DOI :
10.1109/SEMTHE.1988.10610
Filename :
10610
Link To Document :
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