Title :
Reliability of wide bandgap semiconductor power switching devices
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA
Abstract :
Long-term field-reliability of gallium nitride (GaN) and silicon carbide (SiC) power switching devices is critically discussed in terms of bulk material defects. A new static reverse bias stress test circuit with a reactive load is proposed to delineate devices prone to field-failures.
Keywords :
gallium compounds; power semiconductor switches; semiconductor device reliability; silicon compounds; wide band gap semiconductors; GaN; SiC; bulk material defects; field failures; gallium nitride; long-term field reliability; silicon carbide; static reverse bias stress test circuit; wide bandgap semiconductor power switching devices; Materials; Power semiconductor switches; Power supplies; Reliability; Stress; Switches; Switching circuits; Gallium nitride (GaN); field-reliability; material defects; silicon carbide (SiC);
Conference_Titel :
Aerospace and Electronics Conference (NAECON), Proceedings of the IEEE 2010 National
Conference_Location :
Fairborn, OH
Print_ISBN :
978-1-4244-6576-7
DOI :
10.1109/NAECON.2010.5712971
