DocumentCode
2512860
Title
Life issues, robustness consequences and reliability challenges for Very Deep Sub Micron technologies
Author
Perdu, Philippe
Author_Institution
DCT/AQ/LE, CNES, Toulouse, France
fYear
2010
fDate
12-16 April 2010
Firstpage
1014
Lastpage
1019
Abstract
Reliability and robustness are strongly linked: aging amplifies robustness issues while environmental stress accelerates aging. As Very Deep Sub Micron (VDSM) technologies offer early wear out and intrinsically lower margins, lifetime and EMC become a coupled challenge that underlines the need of a complete and multidisciplinary approach joining EMC, reliability, device characterization and internal testing skills. Trends, proof of evidence and internal testing approach are described in order to emphasize the need of device aging consideration in robustness studies.
Keywords
VLSI; electromagnetic compatibility; integrated circuit reliability; EMC; VDSM technology; device aging; device characterization; environmental stress; internal testing skills; very deep sub micron technology; Accelerated aging; Electromagnetic compatibility; Embedded system; Integrated circuit reliability; Internal stresses; Inverters; Power supplies; Power system reliability; Robustness; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on
Conference_Location
Beijing
Print_ISBN
978-1-4244-5621-5
Type
conf
DOI
10.1109/APEMC.2010.5475630
Filename
5475630
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