A two dimensional analytical model of drain to source current and subthreshold slope of a triple material double gate MOSFET

Author

Mahmud, M.A. ; Subrina, S.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2014

fDate

20-22 Dec. 2014

Firstpage

92

Lastpage

95

Abstract

A two dimensional analytical model of drain to source current as well as subthreshold slope of a triple material double gate MOSFET has been developed in this work. Basic drift-diffusion equation has been used to derive the drain to source current model. An expression of pinch-off voltage has been derived for modeling drain current in saturation region. The current in the device has been studied as function of drain to source voltage and gate voltage as well. In the work, leakage current in zero gate bias condition has also been presented. Variations in subthreshold slope of the device owing to change in device parameters have been lifted up. Our model results have been verified with the simulation data obtained by using a professional numerical device simulator.

Keywords

MOSFET; leakage currents; semiconductor device models; basic drift-diffusion equation; device parameters; drain to source current model; drain to source voltage function; gate voltage; leakage current; pinch-off voltage expression; professional numerical device simulator; saturation region; subthreshold slope; triple material double gate MOSFET; two dimensional analytical model; zero gate bias condition; Analytical models; Leakage currents; Logic gates; MOSFET; Materials; Mathematical model; Threshold voltage; Drain to source current; gate engineering; leakage current; pinch off voltage; subthreshold slope;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-4167-4

Type

conf

DOI

10.1109/ICECE.2014.7026926

Filename

7026926