Title :
Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection
Author :
Boubanga-Tombet, Stephane ; Tanimoto, Yudai ; Watanabe, Takayuki ; Suemitsu, Tetsuya ; Wang, Yuye ; Minamide, Hiroaki ; Ito, Hiromasa ; Popov, Vyacheslav ; Otsuji, Taiichi
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
We report terahertz detectors with a record sensitivity of 6.4 kV/W and noise equivalent power of 15 pW/√Hz in the above 1 THz region. The key point of this major breakthrough is careful design and fabrication of Plasmonic devices based on Field Effect Transistor structures combining interdigitated metal gates and an asymmetric metallization scheme.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; InGaAs-InAlAs-InP; asymmetric dual-grating gate HEMT; asymmetric metallization scheme; field effect transistor structure; interdigitated metal gate; noise equivalent power; plasmonic device; terahertz detector; ultrafast sensitive terahertz detection; ultrahigh sensitive terahertz detection; Detectors; HEMTs; Logic gates; MODFETs;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380401
