Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection

Author

Boubanga-Tombet, Stephane ; Tanimoto, Yudai ; Watanabe, Takayuki ; Suemitsu, Tetsuya ; Wang, Yuye ; Minamide, Hiroaki ; Ito, Hiromasa ; Popov, Vyacheslav ; Otsuji, Taiichi

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2012

fDate

23-28 Sept. 2012

Firstpage

1

Lastpage

2

Abstract

We report terahertz detectors with a record sensitivity of 6.4 kV/W and noise equivalent power of 15 pW/√Hz in the above 1 THz region. The key point of this major breakthrough is careful design and fabrication of Plasmonic devices based on Field Effect Transistor structures combining interdigitated metal gates and an asymmetric metallization scheme.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; InGaAs-InAlAs-InP; asymmetric dual-grating gate HEMT; asymmetric metallization scheme; field effect transistor structure; interdigitated metal gate; noise equivalent power; plasmonic device; terahertz detector; ultrafast sensitive terahertz detection; ultrahigh sensitive terahertz detection; Detectors; HEMTs; Logic gates; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on

Conference_Location

Wollongong, NSW

ISSN

2162-2027

Print_ISBN

978-1-4673-1598-2

Electronic_ISBN

2162-2027

Type

conf

DOI

10.1109/IRMMW-THz.2012.6380401

Filename

6380401