Title :
Comparision of wide band gap semiconductors for power electronics applications
Author :
Jain, Heena ; Rajawat, Sapna ; Agrawal, Puja
Author_Institution :
Electron. & Commun., Coll. of Technol. & Eng. (C.T.A.E), Udaipur
Abstract :
Recently, power electronic devices have reached fundamental limits imposed by the low breakdown field, low thermal conductivity and limited switching frequency of Si. Substantial improvements can only be achieved by turning over to semiconductors showing remarkable performance in the frame. These are WBG semiconductors which constitute GaN, SiC and diamond which have long been swashed for their potential superior performance in high frequency and high power applications. This review paper envisages, the core aspects of WBG semiconductors, comparison on the basis of their characteristics and their applicability in power electronics. It also includes an overview of the market for WBG semiconductors and the future perspective for power devices.
Keywords :
diamond; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; C; GaN; SiC; diamond; gallium nitride; high frequency applications; high power applications; power electronic devices; silicon carbide; wide band gap semiconductor; Electric breakdown; Frequency; Gallium nitride; Photonic band gap; Power electronics; Schottky diodes; Silicon carbide; Temperature; Thermal conductivity; Wide band gap semiconductors; Diamond; Gallium Nitride; Power Electronics devices; Silicon Carbide; Wide band gap semiconductor devices;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4763184
