Title :
Device layer transferred poly-Si TFT array for high resolution liquid crystal projector
Author :
Sumiyoshi, K. ; Sato, Y. ; Kaneko, S. ; Sakamoto, M. ; Imai, M. ; Kato, Y. ; Wada, S. ; Kohashi, H. ; Ashibe, M. ; Ohmachi, T. ; Kubota, K. ; Endo, N.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
An active-matrix liquid-crystal light valve (LCLV) for a high-resolution projector, using device layer transfer technology, is proposed. This LCLV will not require high-density interconnection between bus lines and Si IC drivers. To confirm the validity of this proposal, a high-performance poly-Si TFT (thin-film transistor) array with 480*768 pixels in 80 mm diagonal has been fabricated on an oxidized Si wafer. This TFT has a triple-gate structure for obtaining a high on/off current ratio and buried-isolated-pixel-electrode (BIP) structure and ITO barrier metal for reducing defects. This TFT array was transferred onto transparent glass substrate using device layer transfer technology, and the liquid-crystal projector was successfully realized.<>
Keywords :
elemental semiconductors; liquid crystal displays; optical projectors; silicon; thin film transistors; 368640 pixels; 480 pixels; 768 pixels; ITO barrier metal; Si; Si-ITO; Si-InSnO; TFT array; active-matrix liquid-crystal light valve; buried-isolated-pixel-electrode; device layer transfer technology; high on/off current ratio; high resolution liquid crystal projector; oxidized wafer; transparent glass substrate; triple-gate structure; Active matrix liquid crystal displays; Active matrix technology; Electrodes; Glass; Integrated circuit interconnections; Liquid crystal devices; Liquid crystal displays; Proposals; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74252
