Analytical techniques for the simulation of electron transport in semiconductor systems

Author

Barrett, J.A. ; De Souza, M.M. ; Cirstea, M. ; Cirstea, S.

Author_Institution

Dept. of Comput. & Technol., Anglia Ruskin Univ., Cambridge, UK

fYear

2012

fDate

24-26 May 2012

Firstpage

822

Lastpage

826

Abstract

This work investigates analytical techniques for the solutions of the coupled system of non-linear Schrodinger-Poisson Model for simulation of electronic states in semiconductor devices. Using techniques from complex analysis, we calculate the electrostatic potential and eigenvalues of the system. In particular, the eigenvalues and eigenfunctions are obtained via Evans function which is a complex analytical function. The results obtained for two and three dimensional systems show improved simulation times.

Keywords

Poisson equation; Schrodinger equation; electron transport theory; semiconductor devices; 3D system; Evans function; complex analysis; complex analytical function; coupled system; eigenfunctions; eigenvalues; electron transport simulation; electronic states; electrostatic potential; nonlinear Schrodinger-Poisson model; semiconductor device; semiconductor system; Computational modeling; Eigenvalues and eigenfunctions; Electric potential; Electrostatics; Equations; Logic gates; Mathematical model;

fLanguage

English

Publisher

ieee

Conference_Titel

Optimization of Electrical and Electronic Equipment (OPTIM), 2012 13th International Conference on

Conference_Location

Brasov

ISSN

1842-0133

Print_ISBN

978-1-4673-1650-7

Electronic_ISBN

1842-0133

Type

conf

DOI

10.1109/OPTIM.2012.6231948

Filename

6231948