Title :
Fabrication and characterisation of AlGaAs/InGaAs/GaAs pseudomorphic HEMT with in-situ epitaxial aluminium grown by MBE
Author :
Aziz, Azlan Abdul ; Missous, Mohamed
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Abstract :
The fabrication and characterisation of AlGaAs/InGaAs/GaAs pseudomorphic HEMT (P-HEMT) with an in-situ deposited epitaxial aluminium gate by MBE is reported. A simpler technique of fabricating a HEMT without the inherent problem associated with gate recess is described. Its advantages over conventional method of fabricating HEMTs are also shown. The near ideal epitaxial-Al/AlGaAs Schottky barrier contact is exploited in this work, resulting in excellent I-V and thermal treatment characteristics. This epitaxial Al diode has a better ideality factor, higher barrier height and higher breakdown voltage but higher series resistance than that of an Au diode
Keywords :
III-V semiconductors; Schottky barriers; aluminium; aluminium compounds; electric breakdown; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power HEMT; semiconductor device metallisation; semiconductor-metal boundaries; Al-AlGaAs-InGaAs-GaAs; Al/AlGaAs Schottky barrier contact; I-V characteristics; MBE; P-HEMT; PHEMT characterisation; PHEMT fabrication; barrier height; breakdown voltage; epitaxial Al diode; ideality factor; in-situ epitaxial Al gate; power device; pseudomorphic HEMT; series resistance; thermal treatment characteristics; Aluminum; Fabrication; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Molecular beam epitaxial growth; PHEMTs; Schottky barriers; Schottky diodes;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668622
