DocumentCode :
2513556
Title :
Device Characteristics of Ferroelectric Ceramic KNO3Thin-Film Raw Memories
Author :
Scott, J.F. ; Godfrey, R.B. ; Araujo, C.A. ; McMillan, L.D. ; Meadows, H.Brett ; Golabi, Manooch
fYear :
1986
fDate :
8-11 June 1986
Firstpage :
569
Lastpage :
571
Keywords :
Ceramics; Fatigue; Ferroelectric materials; Logic devices; Material storage; Nonvolatile memory; Thin film devices; Timing; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics. 1986 Sixth IEEE International Symposium on
Conference_Location :
Bethlehem, PA, USA
Type :
conf
DOI :
10.1109/ISAF.1986.201207
Filename :
1538147
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2513556
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