DocumentCode :
2513586
Title :
Non-Volatile Memory Behaviour of Metal - Ferroelectric (BaTiO3Film) - Semiconductor (Si) - MFS Devices
Author :
Mansingh, Abhai ; Sreenivas, K. ; Rao, T. Sudersena
fYear :
1986
fDate :
8-11 June 1986
Firstpage :
576
Lastpage :
579
Keywords :
Dielectrics and electrical insulation; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Semiconductor films; Semiconductor thin films; Silicon; Sputtering; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics. 1986 Sixth IEEE International Symposium on
Conference_Location :
Bethlehem, PA, USA
Type :
conf
DOI :
10.1109/ISAF.1986.201209
Filename :
1538149
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2513586
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