Nano-bridge enabled three-dimensional gate-all-around field effect transistors

We demonstrate the integration of nanowires to design gate-all-around field-effect-transistors (GAA-FETs) in the shape of horizontally aligned 3-dimensional semiconductor nano-bridges. The transistors exhibited a high on/off-current ratio, low sub-threshold swing and very low off-currents. In addition to designing low-voltage non-volatile memory cells, the photosensitivity of the FETs is employed to demonstrate several analog and digital applications such as electro-optical OR gate circuit elements and frequency doublers. Based on this approach, nanowires with high mobility can be integrated on Si platform to enable the next generation high performance nanowire FETs.