Title :
Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET
Author :
Khan, Saeed Uz Zaman ; Hossain, M. Shamim ; Rahman, Fahim Ur ; Zaman, Rifat ; Hossen, Md Obaidul ; Khosru, Quazi D. M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
Since the fabrication of first III-V Gate-All-Around (GAA) MOSFET it is under extensive research, as it is one of the potential candidates to replace the state of art tri-gate FinFETs, to continue progressive scaling. In this work, transport characterization of experimentally demonstrated gate-all-around (GAA) InxGa1-xAs nanowire MOSFET in near-ballistic regime is performed using 3D self-consistent Schrödinger-Poisson solver based on Uncoupled Mode Space approach, taking wave function penetration and other quantum mechanical effects into account. The effects of channel length variation on transport characteristics are also examined.
Keywords :
III-V semiconductors; MOSFET; Poisson equation; Schrodinger equation; ballistic transport; gallium arsenide; indium compounds; nanowires; scaling circuits; three-dimensional integrated circuits; wave functions; 3D self-consistent Schrodinger-Poisson solver; GAA MOSFET; III-V gate-all-around nanowire MOSFET fabrication; InxGa1-xAs; channel length variation; near-ballistic regime; progressive scaling; quantum mechanical effects; transport modeling characterization; trigate FinFET; uncoupled mode space approach; wave function penetration; Electric potential; Logic gates; MOSFET; Mathematical model; Silicon; Three-dimensional displays; Ballistic Transport; Gate-all-around MOSFET; III–V Channel Material; InxGa1−xAs Nanowire; Mode Space Approach;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4167-4
DOI :
10.1109/ICECE.2014.7026963
