Surface potential modeling of Junctionless Double Gate MOSFETs using gradual depletion approximation

A new model for long channel Junctionless Double Gate (JL DG) MOSFETs based on gradual depletion inside the channel is presented. This new model uses a regional approach to determine surface potential of JL DG MOSFETs. Because of the gradual depletion approximation surface potential characteristics are found to have smooth transition between fully depleted region and partially depleted region. This smoothness may prove useful for modeling with SPICE like programs. The proposed model shows improved performance over the previous models based on abrupt depletion. Dependences of surface potential on various device and process parameters have also been studied. The validity of the proposed model has been checked with numerical simulations and TCAD tool. Upon comparison, it has been found that the results obtained from proposed model matches quite perfectly with those provided by numerical simulations and TCAD tool.