DocumentCode
2513857
Title
The effect of frequency on the thermal effect of high power microwave pulses on a PIN limiter
Author
Xu, Tao ; Chen, Xi ; Du, Zhengwei
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
2010
fDate
12-16 April 2010
Firstpage
401
Lastpage
404
Abstract
A PIN limiter is often used as a microwave protector to prevent the RF front ends against direct damage from high power microwave pulses. The thermal effect of high power microwave pulses on a PIN limiter is an important issue. Since frequency is an important parameter of microwave pulses, the effect of frequency is discussed in this paper. A semiconductor simulator based on Drift-Diffusion Model is used to carry out the simulations. Results show that there is a turning point of frequency. Below the turning frequency, pulse width (the duration of time before the PIN diode burns out) decreases as frequency increases. Above the turning frequency, the relation between pulse width and frequency is more complicated and is affected by incident power.
Keywords
microwave diodes; microwave limiters; p-i-n diodes; thermal analysis; PIN diode; PIN limiter; RF front ends; drift-diffusion model; high power microwave pulses; microwave protector; semiconductor simulator; thermal effect; turning frequency mechanism; Circuit simulation; Doping; EMP radiation effects; Laboratories; Microwave antennas; Protection; Radio frequency; Semiconductor process modeling; Space vector pulse width modulation; Turning; PIN limiter; high power microwave; pulse width; semiconductor simulator; thermal effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on
Conference_Location
Beijing
Print_ISBN
978-1-4244-5621-5
Type
conf
DOI
10.1109/APEMC.2010.5475684
Filename
5475684
Link To Document