• DocumentCode
    2513857
  • Title

    The effect of frequency on the thermal effect of high power microwave pulses on a PIN limiter

  • Author

    Xu, Tao ; Chen, Xi ; Du, Zhengwei

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • fYear
    2010
  • fDate
    12-16 April 2010
  • Firstpage
    401
  • Lastpage
    404
  • Abstract
    A PIN limiter is often used as a microwave protector to prevent the RF front ends against direct damage from high power microwave pulses. The thermal effect of high power microwave pulses on a PIN limiter is an important issue. Since frequency is an important parameter of microwave pulses, the effect of frequency is discussed in this paper. A semiconductor simulator based on Drift-Diffusion Model is used to carry out the simulations. Results show that there is a turning point of frequency. Below the turning frequency, pulse width (the duration of time before the PIN diode burns out) decreases as frequency increases. Above the turning frequency, the relation between pulse width and frequency is more complicated and is affected by incident power.
  • Keywords
    microwave diodes; microwave limiters; p-i-n diodes; thermal analysis; PIN diode; PIN limiter; RF front ends; drift-diffusion model; high power microwave pulses; microwave protector; semiconductor simulator; thermal effect; turning frequency mechanism; Circuit simulation; Doping; EMP radiation effects; Laboratories; Microwave antennas; Protection; Radio frequency; Semiconductor process modeling; Space vector pulse width modulation; Turning; PIN limiter; high power microwave; pulse width; semiconductor simulator; thermal effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-5621-5
  • Type

    conf

  • DOI
    10.1109/APEMC.2010.5475684
  • Filename
    5475684