• DocumentCode
    2513940
  • Title

    Terahertz generation by GaAs nanowires

  • Author

    Trukhin, V.N. ; Buyskih, A.S. ; Buravlev, A.D. ; Cirlin, G.E. ; Horkov, D.P. ; Samoilov, L.L. ; Samsonenko, Yu B.

  • Author_Institution
    Ioffe Phys. Tech. Inst., St. Petersburg, Russia
  • fYear
    2012
  • fDate
    23-28 Sept. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The investigation of terahertz generation by the surface of n-InAs layers and by GaAs nanowires grown on n-GaAs (111) substrates is presented. It was observed that the terahertz radiation power efficiency is significantly higher in the second case.
  • Keywords
    III-V semiconductors; gallium arsenide; nanowires; terahertz wave spectra; GaAs; nanowires; terahertz generation; terahertz radiation power efficiency; Gallium arsenide; Gold; Nonlinear optics; Optical pulses; Optical surface waves; Stimulated emission; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
  • Conference_Location
    Wollongong, NSW
  • ISSN
    2162-2027
  • Print_ISBN
    978-1-4673-1598-2
  • Electronic_ISBN
    2162-2027
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2012.6380432
  • Filename
    6380432
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2513940