Title :
Design and development of SiGe HBT based high gain amplifier for GPS application
Author :
Soni, Brijesh Kumar ; Ramasubramanian, R. ; Sancheti, Sandeep
Author_Institution :
Commun. Syst. Group, ISRO Satellite Centre, Bangalore
Abstract :
A two stage high gain small signal amplifier for GPS based receiver application is designed and realised using SiGe heterojunction bipolar transistor (HBT). The measured gain and noise figure is 33.5 dB and 2.9 d B respectively at Vce of 2 V, and total current of 10 mA. The circuit is fabricated on microstrip configuration using RT duroid substrate of dielectric constant 10.5 and height 50 mils. This circuit is being used in satellite based GPS receiver.
Keywords :
Ge-Si alloys; Global Positioning System; heterojunction bipolar transistors; microwave amplifiers; microwave bipolar transistors; permittivity; radio receivers; satellite communication; HBT design; RT duroid substrate; SiGe; current 10 mA; dielectric constant; gain 33.5 dB; heterojunction bipolar transistor; high gain microstrip amplifier; microstrip configuration; microwave transistor amplifier; noise figure 2.9 dB; satellite based GPS receiver; voltage 2 V; Circuits; Current measurement; Dielectric measurements; Gain measurement; Germanium silicon alloys; Global Positioning System; Heterojunction bipolar transistors; Noise measurement; Signal design; Silicon germanium; GPS; HBT; Microstrip amplifier; Si BJT; SiGe;
Conference_Titel :
Recent Advances in Microwave Theory and Applications, 2008. MICROWAVE 2008. International Conference on
Conference_Location :
Jaipur
Print_ISBN :
978-1-4244-2690-4
Electronic_ISBN :
978-1-4244-2691-1
DOI :
10.1109/AMTA.2008.4763218
