DocumentCode :
2514182
Title :
An improved algorithm for large-capacity flash memory systems
Author :
Xu, Quan ; Lee, Jian-bing
Author_Institution :
Inst. of Electron., Chinese Acad. of Sci., Beijing, China
fYear :
2010
fDate :
28-30 Nov. 2010
Firstpage :
307
Lastpage :
310
Abstract :
This paper introduces an improved algorithm to distribute erase operations evenly across the large-capacity flash memory system. Such implementation requires the wear-leveling mechanism to deal with a large proportion of data that is not frequently updated. The original algorithm shows a good performance in lowering memory consumption but can not well satisfy that requirement. Detailed analysis show how the problem occurs, and our work focuses on addressing this problem. Moreover, a FIFO structure is used in this algorithm to improve the efficiency of basic hot-cold data swapping. The simulation results demonstrate that the proposed algorithm provides a much higher performance than the previous scheme, while consuming roughly the same memory space.
Keywords :
flash memories; memory architecture; FIFO structure; erase operations; hot-cold data swapping; large-capacity flash memory; memory consumption; wear-leveling mechanism; Algorithm design and analysis; Approximation algorithms; Data structures; Flash memory; Mathematical model; Memory management; Simulation; FIFO; Lifetime; NAND Flash; Storage Systems; Wear Leveling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information Computing and Telecommunications (YC-ICT), 2010 IEEE Youth Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-8883-4
Type :
conf
DOI :
10.1109/YCICT.2010.5713106
Filename :
5713106
Link To Document :
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