Title :
InP-based resonant tunneling diode with high peak-to-valley current ratio for THz application
Author :
Wang, Wei ; Sun, Hao ; Li, Lingyun ; Sun, Xiaowei
Author_Institution :
Key Lab. of Terahertz Solid-State Technol., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China
Abstract :
An InP-based resonant tunneling diode (RTD) is fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio (PVCR) of more than 40 at room temperature, with a peak current density 24 kA/cm2. The extraction of device parameters from DC and microwave measurements is presented together with a RTD equivalent circuit model.
Keywords :
equivalent circuits; microwave diodes; resonant tunnelling diodes; terahertz wave devices; DC measurements; InP-based resonant tunneling diode; PVCR; RTD; THz application; air bridge technology; equivalent circuit model; microwave measurements; peak-to-valley current ratio; Current density; Equivalent circuits; Integrated circuit modeling; Microwave measurements; Resistance; Resonant tunneling devices; Temperature measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380445
