Title :
GaAs HBT power amplifier with smooth gain control characteristics
Author_Institution :
Nokia Res. Center, Espoo, Finland
Abstract :
A gain control scheme giving simultaneously an effective power switch-off operation and smooth gain control characteristics is presented. The concept was applied to a 3-stage power amplifier which was a part of a 900-MHz transmitter chip. The chip was realised by using GaAs MMIC technology and was mounted on a ceramic substrate. The power amplifier was tested separately by mounting it directly on a conventional FR4 board. In this lossy environment the power amplifier delivered an output power of 33.2 dBm with a supply voltage of 3.5 V. The maximum value of the gain control slope was 22 V/V showing a good agreement to the simulations
Keywords :
III-V semiconductors; UHF power amplifiers; bipolar MMIC; bipolar digital integrated circuits; gain control; gallium arsenide; radio transmitters; 3-stage power amplifier; 3.5 V; 900 MHz; GaAs; GaAs HBT power amplifier; GaAs MMIC; ceramic substrate; effective power switch-off operation; lossy environment; smooth gain control characteristics; Circuits; Gain control; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Mirrors; Power amplifiers; Power generation; Transmitters; Voltage control;
Conference_Titel :
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location :
Colorado Springs, CO
Print_ISBN :
0-7803-4988-1
DOI :
10.1109/RAWCON.1998.709201
