Title :
The difference between oxygen and sulfur adsorption on the InSb (110) surface
Author :
Zhang, Y. ; Huang, Y. ; Chen, X.S. ; Lu, W.
Abstract :
In this paper, we compared the difference between oxygen and sulfur adsorption on the InSb (110) surface by using first-principle calculations. The theoretical calculation results have demonstrated the advantages of sulfur adsorption, which provides a reasonable way for explaining the reason of selecting sulfur passivation on the InSb surface in technology.
Keywords :
III-V semiconductors; ab initio calculations; adsorption; indium compounds; oxygen; passivation; sulphur; InSb; O; S; first-principle calculations; oxygen adsorption; reasonable way; sulfur adsorption; sulfur passivation selection; Atomic layer deposition; Energy states; Microscopy; Optical surface waves; Surface cleaning;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380467
