Title :
Monocrystalline beta -SiC semiconductor thin films: epitaxial growth, doping, and FET device development
Author :
Bumgarner, John W. ; Kong, Hua-Shuang ; Kim, Hyeong J. ; Palmour, John W. ; Edmond, John A. ; Glass, Jeffrey T. ; Davis, Robert F.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
High-purity, single-crystal beta -SiC thin films have been epitaxially grown by means of chemical vapor deposition. The defect nature of these films has been characterized, and antiphase boundaries, one of the major defects observed, were eliminated through utilization of off-axis Si-substrates. Doping of these films was possible through in-situ incorporation during growth or through ion implantation. The use of elevated temperatures during ion implantation resulted in damage-free material suitable for device fabrication. MESFETs constructed from these films showed good transistor action up to temperature of 523 K. Depletion-mode MOSFETs fabricated on beta -SiC
Keywords :
Schottky gate field effect transistors; annealing; antiphase boundaries; insulated gate field effect transistors; ion implantation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon compounds; vapour phase epitaxial growth; 2.4 micron; 296 K; 573 K; 923 K; MESFETs; SiC:Al; SiC:N; annealing; antiphase boundaries; chemical vapor deposition; depletion mode MOSFET; epitaxial growth; in-situ incorporation; ion implantation; semiconductor doping; single crystal SiC:B thin films; transconductance; Chemical vapor deposition; Fabrication; Ion implantation; MESFETs; MOSFETs; Semiconductor device doping; Semiconductor films; Semiconductor thin films; Sputtering; Temperature;
Conference_Titel :
Electronics Components Conference, 1988., Proceedings of the 38th
Conference_Location :
Los Angeles, CA, USA
DOI :
10.1109/ECC.1988.12615
