Title :
BSIM3 MOSFET model accuracy for RF circuit simulation
Author :
Tin, Suet Fong ; Osman, Ashraf A. ; Mayaram, Kartikeya ; Hu, Chenming
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
Abstract :
The accuracy of the BSIM3 MOSFET model for small-signal RF circuit simulation has been investigated for a 0.5 μm CMOS process. Comparisons of the small signal y and s parameters for different bias conditions and channel lengths show that BSIM3 is reasonably well suited for small-signal analyses from 100 kHz up to 10 GHz
Keywords :
CMOS integrated circuits; UHF integrated circuits; VHF circuits; circuit simulation; integrated circuit modelling; microwave integrated circuits; 0.5 micron; 1E5 to 1E10 Hz; BSIM3 MOSFET model accuracy; CMOS process; RF circuit simulation; bias conditions; channel lengths; s parameters; y parameters; CMOS process; Circuit simulation; Computational modeling; Data mining; Delay effects; Integrated circuit modeling; MOSFET circuits; Medical simulation; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Radio and Wireless Conference, 1998. RAWCON 98. 1998 IEEE
Conference_Location :
Colorado Springs, CO
Print_ISBN :
0-7803-4988-1
DOI :
10.1109/RAWCON.1998.709209
