Title :
Improved CMOS-integrated photodiodes and their application in OEICs
Author :
Zimmermann, Horst
Author_Institution :
Kiel Univ., Germany
Abstract :
Optoelectronic integrated circuits (OEICs) in CMOS technology are investigated. The transient response of integrated PIN photodiodes is calculated analytically and by device simulations. The transient response of the CMOS-integrated photodiodes can be improved by reducing the doping concentration in the epitaxial I-layer. The application of PIN-CMOS-OEICs as high-speed photoreceivers is possible, consequently
Keywords :
CMOS integrated circuits; doping profiles; integrated optoelectronics; optical receivers; p-i-n photodiodes; semiconductor epitaxial layers; transient response; CMOS integrated PIN photodiode; OEIC; doping concentration; epitaxial layer; high-speed photoreceiver; optoelectronic integrated circuit; transient response; Application specific integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Doping; Electron mobility; Optical pulses; Optoelectronic devices; PIN photodiodes; Transient response;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668631
