DocumentCode
2515183
Title
Improved CMOS-integrated photodiodes and their application in OEICs
Author
Zimmermann, Horst
Author_Institution
Kiel Univ., Germany
fYear
1997
fDate
24-25 Nov 1997
Firstpage
346
Lastpage
351
Abstract
Optoelectronic integrated circuits (OEICs) in CMOS technology are investigated. The transient response of integrated PIN photodiodes is calculated analytically and by device simulations. The transient response of the CMOS-integrated photodiodes can be improved by reducing the doping concentration in the epitaxial I-layer. The application of PIN-CMOS-OEICs as high-speed photoreceivers is possible, consequently
Keywords
CMOS integrated circuits; doping profiles; integrated optoelectronics; optical receivers; p-i-n photodiodes; semiconductor epitaxial layers; transient response; CMOS integrated PIN photodiode; OEIC; doping concentration; epitaxial layer; high-speed photoreceiver; optoelectronic integrated circuit; transient response; Application specific integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Doping; Electron mobility; Optical pulses; Optoelectronic devices; PIN photodiodes; Transient response;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location
London
Print_ISBN
0-7803-4135-X
Type
conf
DOI
10.1109/EDMO.1997.668631
Filename
668631
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