Title :
First-principles study of defects distribution with different arsenic doping source in HgCdTe
Author :
Wang, Ziyan ; Huang, Yan ; Lu, Wei ; Chen, Xiaoshuang
Author_Institution :
Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
Using the first-principles methods, we calculated formation energies of point defects and defect complexes in arsenic-doped HgCdTe. In this calculation, different arsenic sources and the second phase As2Te3 are considered. We showed that different arsenic doping sources can affect the distribution of defects and existence of As2Te3. The transition of defect forms is also studied.
Keywords :
II-VI semiconductors; ab initio calculations; arsenic compounds; cadmium compounds; mercury compounds; molecular beam epitaxial growth; point defects; semiconductor doping; semiconductor growth; As2Te3; HgCdTe:As; arsenic doping source; defect complexes; defects distribution; first-principles methods; formation energies; point defects; Asia; Doping; Energy states; Impurities; Molecular beam epitaxial growth; Physics; Reservoirs;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2012 37th International Conference on
Conference_Location :
Wollongong, NSW
Print_ISBN :
978-1-4673-1598-2
Electronic_ISBN :
2162-2027
DOI :
10.1109/IRMMW-THz.2012.6380491
