DocumentCode
251557
Title
Modeling of MOSFETs parameters and volt-ampere characteristics in a wide temperature range for low noise amplifiers design
Author
Pilipenko, A.M. ; Biryukov, V.N.
Author_Institution
Dept. of Fundamentals of Radio Eng., Southern Fed. Univ., Taganrog, Russia
fYear
2014
fDate
26-29 Sept. 2014
Firstpage
1
Lastpage
4
Abstract
The temperature dependencies of the basic parameters of MOSFETs in a temperature range 20 - 300 K are measured. The universal formal four-parametric model, which allows to approximate all experimental temperature dependencies with the relative error less than 1% is proposed. The hybrid analytical model efficiency for approximation of volt-ampere characteristics of MOSFETs is proved.
Keywords
MOSFET; low noise amplifiers; semiconductor device models; MOSFET parameter modeling; low noise amplifiers; temperature 20 K to 300 K; temperature dependencies; volt-ampere characteristics; Accuracy; Analytical models; Approximation methods; MOSFET; Temperature; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Design & Test Symposium (EWDTS), 2014 East-West
Conference_Location
Kiev
Type
conf
DOI
10.1109/EWDTS.2014.7027065
Filename
7027065
Link To Document