DocumentCode :
2515597
Title :
Infrared imaging and backside failure analysis techniques on multilayer CMOS technology
Author :
Chen, Steven ; Shinseki, Brian ; Barutha, Cynthia ; Kha, Ty
Author_Institution :
Intel Corp., Chandler, AZ, USA
fYear :
1997
fDate :
21-25 Jul 1997
Firstpage :
17
Lastpage :
20
Abstract :
Infrared (IR) laser scanning microscopy (LSM) techniques have been characterized and developed to provide better root cause backside failure analysis (BFA) on products fabricated on multilayer CMOS technology. Spectral transmission studies, backside substrate thinning techniques, and examples of backside IR LSM fault isolation techniques applied on high performance microprocessors will be presented in this paper
Keywords :
CMOS digital integrated circuits; failure analysis; infrared imaging; microprocessor chips; backside failure analysis; fault isolation; infrared imaging; laser scanning microscopy; microprocessor; multilayer CMOS technology; spectral transmission; substrate thinning; CMOS technology; Doping; Failure analysis; Infrared imaging; Isolation technology; Microprocessors; Nonhomogeneous media; Optical imaging; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
Type :
conf
DOI :
10.1109/IPFA.1997.638066
Filename :
638066
Link To Document :
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