Impact of NBTI on EMC behaviours of CMOS inverter

Author

Fernandez, R. ; Berbel, N. ; Gil, I. ; Morata, M.

Author_Institution

Dept. d´´Eng. Electron., Univ. Politec. de Catalunya, Terrassa, Spain

fYear

2010

fDate

12-16 April 2010

Firstpage

1020

Lastpage

1023

Abstract

In this paper the Electromagnetic Robustness (EMR) of a CMOS inverter has been analyzed when the pFETs are submitted to negative bias temperature instability (NBTI). The impact of pFET and CMOS inverter has been experimentally quantified and the switching noise and electromagnetic susceptibility has been analyzed by means of simulation. The results show that NBTI reduces the switching noise whereas the EMI susceptibility is not modified.

Keywords

CMOS integrated circuits; electromagnetic compatibility; electromagnetic interference; field effect transistors; integrated circuit noise; invertors; CMOS inverter; EMC behaviours; EMI susceptibility; electromagnetic compatibility; electromagnetic interference; electromagnetic robustness; electromagnetic susceptibility; negative bias temperature instability; pFET; switching noise; Analytical models; Electromagnetic analysis; Electromagnetic compatibility; Electromagnetic interference; Electromagnetic radiation; Inverters; Negative bias temperature instability; Niobium compounds; Noise robustness; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on

Conference_Location

Beijing

Print_ISBN

978-1-4244-5621-5

Type

conf

DOI

10.1109/APEMC.2010.5475776

Filename

5475776