Title :
Impact of NBTI on EMC behaviours of CMOS inverter
Author :
Fernandez, R. ; Berbel, N. ; Gil, I. ; Morata, M.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Politec. de Catalunya, Terrassa, Spain
Abstract :
In this paper the Electromagnetic Robustness (EMR) of a CMOS inverter has been analyzed when the pFETs are submitted to negative bias temperature instability (NBTI). The impact of pFET and CMOS inverter has been experimentally quantified and the switching noise and electromagnetic susceptibility has been analyzed by means of simulation. The results show that NBTI reduces the switching noise whereas the EMI susceptibility is not modified.
Keywords :
CMOS integrated circuits; electromagnetic compatibility; electromagnetic interference; field effect transistors; integrated circuit noise; invertors; CMOS inverter; EMC behaviours; EMI susceptibility; electromagnetic compatibility; electromagnetic interference; electromagnetic robustness; electromagnetic susceptibility; negative bias temperature instability; pFET; switching noise; Analytical models; Electromagnetic analysis; Electromagnetic compatibility; Electromagnetic interference; Electromagnetic radiation; Inverters; Negative bias temperature instability; Niobium compounds; Noise robustness; Titanium compounds;
Conference_Titel :
Electromagnetic Compatibility (APEMC), 2010 Asia-Pacific Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-5621-5
DOI :
10.1109/APEMC.2010.5475776
