High Temperature Properties of CdTe Crystals, doped by Sb

Electrical properties of CdTe single crystals, doped by Sb, in situ at high temperature point defect equilibrium under well defined Cd and Te vapour pressure were studied. Up to ~700-800 K they revealed p-type conductivity both under Cd and Te saturation. From temperature dependency of hole density at 350-650 K the position of deep acceptor level with ionization energy Ea = E_v+0.29 eV was determined. The point defects responsible for holes density are supposed to be Sb_Te. Above 800 K the n-type conductivity is determined by intrinsic point defects: Cd interstitials under Cd saturation and electrons due to native disorder under Te saturation.