Title :
Deep traps induced by 700keV protons in CdTe and CdZnTe Detectors
Author :
Fraboni, Beatrice ; Cavallini, Anna ; Auricchio, Natalia ; Bianconi, Marco
Author_Institution :
Dept. of Phys., Bologna Univ.
fDate :
Oct. 29 2006-Nov. 1 2006
Abstract :
We have studied the effects of 700 keV proton at increasing fluences (up to times 1012 p/cm2) on CdTe:Cl and Cd0.9Zn0.1Te detectors. The charge transport properties of the detectors have been studied by mutau product measurements, gamma spectroscopy and PICTS analyses. The correlation of the macroscopic transport behaviour with the information on the microscopic defective states allowed for the identification of the role played by the dominant traps: levels Z and HI resulted related to electron trapping effects, while levels K and X showed a hole trapping character.
Keywords :
II-VI semiconductors; cadmium compounds; electron traps; hole traps; proton effects; semiconductor counters; 700 keV; Cd0.9Zn0.1Te; CdTe detectors; CdTe:Cl; CdZnTe detectors; PICTS analysis; charge transport properties; deep traps; electron trapping; fluences; gamma spectroscopy; hole trapping; macroscopic transport behaviour; microscopic defective states; Charge measurement; Current measurement; Electron microscopy; Electron traps; Gamma ray detection; Gamma ray detectors; Protons; Spectroscopy; Tellurium; Zinc;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2006.353775
