Title :
A 40 GHz f/sub T/ Si bipolar transistor LSI technology
Author :
Sugiyama, M. ; Takemura, H. ; Ogawa, C. ; Tashiro, T. ; Morikawa, T. ; Nakamae, M.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A high-speed Si bipolar transistor with f/sub T/ (cutoff frequency) of 40 GHz using advanced BSA (BSG self-aligned) technology is described. The advanced BSA technology is characterized by graded profiled collector, buried emitter electrode structure, and 0.8- mu m design rule. The advanced BSA technology for further improving the f/sub T/ performance of the sub-100-nm-deep base transistor has been developed by adding these three technologies to the basic BSA technology, in which chemical vapor deposition (CVD)-BSG film is used as a diffusion source to form the intrinsic base and the p/sup +/-link region and as a sidewall spacer between emitter polysilicon and base polysilicon electrodes. The optimized transistor using the advanced BSA technology has exhibited a cutoff frequency of 38 GHz at V/sub CE/ of 1 V, and ECL (emitter coupled logic) gate delay time of 29 ps at I/sub CS/ of 0.3 mA.<>
Keywords :
bipolar integrated circuits; bipolar transistors; emitter-coupled logic; integrated circuit technology; large scale integration; solid-state microwave devices; 0.3 mA; 0.8 micron; 29 ps; 40 GHz; BSA technology; ECL gate delay time; LSI technology; Si; bipolar transistor; buried emitter electrode structure; chemical vapor deposition; cutoff frequency; diffusion source; graded profiled collector; intrinsic base; sidewall spacer; Bipolar transistors; Boron; Cutoff frequency; Electrodes; Epitaxial layers; Isolation technology; Kirk field collapse effect; Large scale integration; Parasitic capacitance; Tungsten;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74265
