Title :
A System for the Characterization and Testing of CdZnTe/CdTe Pixel Detectors for X-ray and Gamma-ray Imaging
Author :
Arodzero, Anatoli ; Barber, William C. ; Damron, Matthew Q. ; Hartsough, Neal E. ; Iwanczyk, Jan S. ; Malakhov, Nail ; Nygard, Einar ; Moraes, Danielle ; Weilhammer, Peter ; Jarron, Pierre
Author_Institution :
DxRay, Inc., Northridge, CA
fDate :
Oct. 29 2006-Nov. 1 2006
Abstract :
We have developed an automated system for the characterization and testing of CdZnTe/CdTe pixel detectors for X-ray and gamma-ray imaging. A set of custom made pogo-pin arrays and corresponding detector holders have been designed for a precise, non-damaging loading and unloading of detectors to a "measurement habitat" within the system. The architecture of the system is flexible, allowing measurements of current, spectral responses and pulse shapes from individual detector pixels. A multi-channel read-out (up to 256 channels) based on CMOS switches make possible the monitoring of leakage and/or X-ray induced photo- currents sequentially for all individual pixels, for groups of pixels, or for the full detector with different voltage ramping scenario. A measurement of spectral pixel responses can be done with a single-photon-counting ASIC for up to 256 pixels simultaneously, or from individual pixel(s) with discrete read-out electronics. The test system can satisfy many experimental needs including measurements of a detector\´s: 1) temporal response under X-ray or gamma ray irradiation; 2) photon count rate performance; 3) bulk/contact charge transport properties; 4) guard ring or/and passivation effectiveness, and 5) long term stability. Control and data acquisition can be conducted with a local computer, or via the Internet. The system has been successfully operated for about 2 years. Examples of the results obtained with detectors fabricated from different material vendors are presented.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; gamma-ray detection; photon counting; readout electronics; semiconductor counters; CMOS switches; CdZnTe-CdTe; CdZnTe/CdTe pixel detectors; X-ray imaging; X-ray induced photocurrent; X-ray irradiation; bulk charge transport property; contact charge transport property; data acquisition; detector holder; gamma ray irradiation; gamma-ray imaging; guard ring; leakage current; long term stability; multichannel read-out electronics; passivation effectiveness; photon count rate performance; pogo-pin arrays; single-photon-counting ASIC; temporal response; Current measurement; Gamma ray detection; Gamma ray detectors; Nuclear imaging; Pixel; Pulse measurements; System testing; X-ray detection; X-ray detectors; X-ray imaging;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2006. IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0560-2
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2006.353782