DocumentCode :
2516038
Title :
Analysis and quantification of device spectral signatures observed using a spectroscopic photon emission microscope
Author :
Tao, J.M. ; Chim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Liu, Y.Y.
Author_Institution :
Fac. of Eng., Nat. Univ. of Singapore, Singapore
fYear :
1997
fDate :
21-25 Jul 1997
Firstpage :
33
Lastpage :
38
Abstract :
Two normalisation methods have been introduced for the analysis and quantification of device spectral signatures obtained from the spectroscopic photon emission microscope (SPEMS). The parameter: λ1.0 and λ50%, having clear spectral distribution for different devices or mechanisms involved, were found to be useful in device failure analysis. It is also found that these wavelength parameters are dependent on the internal electric fields of the device. Hence, these can be used as an alternative method of monitoring electric fields in devices
Keywords :
failure analysis; optical microscopy; spectral analysis; device failure analysis; internal electric field; normalisation; spectral signature; spectroscopic photon emission microscope; Condition monitoring; Electromagnetic interference; Failure analysis; Integrated circuit reliability; Microscopy; Photonic integrated circuits; Reliability engineering; Semiconductor devices; Spectroscopy; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
Type :
conf
DOI :
10.1109/IPFA.1997.638069
Filename :
638069
Link To Document :
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