Analysis and quantification of device spectral signatures observed using a spectroscopic photon emission microscope

Author

Tao, J.M. ; Chim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Liu, Y.Y.

Author_Institution

Fac. of Eng., Nat. Univ. of Singapore, Singapore

fYear

1997

fDate

21-25 Jul 1997

Firstpage

33

Lastpage

38

Abstract

Two normalisation methods have been introduced for the analysis and quantification of device spectral signatures obtained from the spectroscopic photon emission microscope (SPEMS). The parameter: λ_1.0 and λ_50%, having clear spectral distribution for different devices or mechanisms involved, were found to be useful in device failure analysis. It is also found that these wavelength parameters are dependent on the internal electric fields of the device. Hence, these can be used as an alternative method of monitoring electric fields in devices

Keywords

failure analysis; optical microscopy; spectral analysis; device failure analysis; internal electric field; normalisation; spectral signature; spectroscopic photon emission microscope; Condition monitoring; Electromagnetic interference; Failure analysis; Integrated circuit reliability; Microscopy; Photonic integrated circuits; Reliability engineering; Semiconductor devices; Spectroscopy; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638069

Filename

638069