Author :
Kawanaka, S. ; Ketchen, M.B. ; Bhushan, Mani ; Pearson, D.J. ; McStay, K. ; Sherony, M. ; Fisher, Peter ; Matsumoto, Kaname ; Utomo, H. ; Nii, Hiroshi ; Sudo, G. ; Rausch, W. ; Kimura, Hiromitsu ; Nakao, Tomoki ; Park, Heejung ; Oh, Sang-Hoon ; Waite, And
Author_Institution :
Toshiba America Electron. Components Inc., Hopewell Junction, NY, USA
Abstract :
Body voltage (Vb) control in partially-depleted Silicon-on-Insulator (PD-SOI) is one of the critical technology parameters to achieve high performance devices. The floating body effect (FBE) introduces a history dependency in AC operation mode as well as an increase in drain-induced-barrier-lowering (DIBL) in DC mode. Gate oxide scaling significantly increases this history due to the exponential increase in gate oxide tunneling current on thickness reduction. In this paper, the sensitivity of key device parameters on the history effect is evaluated on a 90 nm device node. We demonstrate that the control of the diode current between body and source and drain is one of the most sensitive and promising techniques to reduce the history effect as well as increasing the DC device performance.
Keywords :
elemental semiconductors; insulated gate field effect transistors; silicon-on-insulator; tunnelling; 90 nm; AC operation mode; DC device performance; DC operation mode; Si; body voltage control; device parameters; diode current; drain induced barrier lowering; floating body effect; gate oxide scaling; gate oxide tunneling current; high performance devices; history effect sensitivity; partially depleted silicon on insulator; Capacitance; Delay effects; Diodes; Electronic components; FETs; History; Large scale integration; Space technology; Switches; Voltage;
