Physical modelling and design of thin film SOI lateral PIN photodiodes for blue DVD-applications

Author

Afzalian, Aryan ; Flandre, Denis

Author_Institution

Lab. de Microelectron., Univ. Catholique de Louvain, Belgium

fYear

2004

fDate

4-7 Oct. 2004

Firstpage

21

Lastpage

23

Abstract

In this article, performances and design of thin-film SOI photodiodes have been investigated in terms of speed, dark current and sensitivity. Speed performances may make such diodes, the only suitable low cost integrated photodetectors for fast optical storage and communication systems. Their advantage in term of dark leakage currents also allows low noise and low offset performances. A 4 to 5 μm intrinsic length PIN diodes in a 0.12 μm SOI technology appear highly suitable for blue DVD applications.

Keywords

digital versatile discs; elemental semiconductors; leakage currents; optical communication; optical storage; p-i-n photodiodes; semiconductor device models; silicon-on-insulator; thin films; 0.12 micron; 4 to 5 micron; SOI technology; Si; blue DVD applications; dark leakage currents; integrated photodetectors; optical communications; optical storage; photodiode design; photodiode speed performance; physical modelling; thin film SOI lateral PIN photodiodes; Costs; Dark current; Diodes; Integrated optics; Optical films; Optical noise; Optical sensors; PIN photodiodes; Photodetectors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2004. Proceedings. 2004 IEEE International

Print_ISBN

0-7803-8497-0

Type

conf

DOI

10.1109/SOI.2004.1391538

Filename

1391538