Statistical optimization of high frequency LDMOS devices via hyper-fractionated experimental designs

Author

Elias, Russell J. ; Ma, Gordon C. ; Golonka, Laurence S.

Author_Institution

Motorola Inc., Phoenix, AZ, USA

fYear

1996

fDate

14-16 Oct 1996

Firstpage

462

Lastpage

466

Abstract

Advanced statistical techniques are utilized to develop a multivariable device characterization of a submicron, two gigahertz laterally diffused metal oxide semiconductor (LDMOS) transistor. A twelve variable, 1/128th fractional factorial of resolution class IV is designed and executed to characterize this device in terms of threshold voltage, contact resistance, and leakages. The Motorola “10×” Product Development Initiative is presented and the contribution of hyper-fractionated experimental designs to this and other “time to market” challenges is discussed

Keywords

MOSFET; design of experiments; optimisation; semiconductor device models; Motorola 10× Product Development Initiative; contact resistance; high frequency LDMOS device; hyper-fractionated experimental design; leakage; multivariable device; statistical optimization; submicron gigahertz laterally diffused metal oxide semiconductor transistor; threshold voltage; time to market; Contact resistance; Design for experiments; Design optimization; Fractionation; Manufacturing; Noise robustness; Product development; Radio frequency; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Symposium, 1996., Nineteenth IEEE/CPMT

Conference_Location

Austin, TX

ISSN

1089-8190

Print_ISBN

0-7803-3642-9

Type

conf

DOI

10.1109/IEMT.1996.559788

Filename

559788